SSM3J46CTB 2009-09-28 1 toshiba field-effect transistor silicon p-chan nel mos type (u-mos ) SSM3J46CTB power management switch applications ? 1.5 v drive ? low on-resistance:r on = 250 m ? (max) (@v gs = -1.5 v) r on = 178 m ? (max) (@v gs = -1.8 v) r on = 133 m ? (max) (@v gs = -2.5 v) r on = 103 m ? (max) (@v gs = -4.5 v) absolute maximum ratings (ta = 25c) characteristic symbol rating unit drain-source voltage v dss -20 v gate-source voltage v gss 8 v dc i d -2.0 drain current pulse i dp -4.0 a drain power dissipation p d (note 1) 1000 mw channel temperature t ch 150 c storage temperature range t stg ?55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause th is product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: mounted on a fr4 board. (25.4 mm 25.4 mm 1.6 mm, cu pad: 645 mm 2 ) marking (top view) pin condition (top view) equivalent circuit unit: mm 1. gate 2. source 3. drain cst3b jedec D jeita D toshiba 2-1t1a weight: 1.5 mg (typ.) s v 1 2 3 polarity mark 12 3 1. gate 2. source 3. drain *electrodes: on the bottom polarity mark (on the top) 0.8 0.05 1.2 0.05 0.48 +0.02 -0.03 b a 1 0.65 0.70 0.03 0.25 0.03 0.45 0.25 0.03 0.65 0.03 2 3 0.05 0.03 0.2 0.02 0.05 0.03 b a 0.04 m m 0.04 b a bottom view
SSM3J46CTB 2009-09-28 2 electrical characteristics (ta = 25c) characteristic symbol test conditions min typ. max unit v (br) dss i d = ?1 ma, v gs = 0 v ?20 ? ? v drain-source breakdown voltage v (br) dsx i d = ?1 ma, v gs = 5 v (note 3) ?15 ? ? v drain cut-off current i dss v ds = ?20 v, v gs = 0 v ? ? ?1 a gate leakage current i gss v gs = 8 v, v ds = 0 v ? ? 1 a gate threshold voltage v th v ds = ?3 v, i d = ?1 ma ?0.3 ? ?1.0 v forward transfer admittance ? y fs ? v ds = ?3 v, i d = ? 1.0 a (note 2) 2.6 5.2 ? s i d = -1.5 a, v gs = ? 4.5 v (note 2) ? 88.5 103 i d = -1.0 a, v gs = ? 2.5 v (note 2) ? 107.5 133 i d = -0.5 a, v gs = ? 1.8 v (note 2) ? 130 178 drain?source on-resistance r ds (on) i d = -0.25 a, v gs = ? 1.5 v (note 2) ? 151 250 m input capacitance c iss ? 290 ? output capacitance c oss ? 44 ? reverse transfer capacitance c rss v ds = ?10 v, v gs = 0 v f = 1 mhz ? 32 ? pf turn-on time t on ? 13.4 ? switching time turn-off time t off v dd = ?10 v, i d = ?0.5 a v gs = 0 to ? 2.5 v, r g = 4.7 ? 46.2 ? ns total gate charge q g ? 4.7 ? gate-source charge q gs ? 3.7 ? gate-drain charge q gd v dd = ?10 v, i ds = ?2.0 a, v gs = ? 4.5 v ? 1.0 ? nc drain-source forward voltage v dsf i d = 2.0 a, v gs = 0 v (note 2) ? 0.9 1.2 v note2: pulse test note3: v dsx mode (the application of a plus voltage between gate and source) may cause decrease in maximun rating of drain-source voltage switching time test circuit (a) test circuit (b) v in notice on usage v th can be expressed as the voltage between gate and sour ce when the low operating current value is i d = -1 ma for this product. for normal switching operation, v gs (on) requires a higher voltage than v th and v gs (off) requires a lower voltage than v th. (the relationship can be established as follows: v gs (off) < v th < v gs (on). ) take this into consideration when using the device. handling precaution when handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. v dd = -10 v r g = 4.7 duty 1% v in : t r , t f < 5 ns common source ta = 25c in 0 ? 2.5v 10 s v dd out r g r l t on 90% 10% ?2.5 v 0 v 90% 10% t off t t f v ds ( on ) v dd
SSM3J46CTB 2009-09-28 3 -4.0 r ds (on) ? i d drain current i d (a) drain?source on-resistance r ds (on) (m ? ) 0 -1.0 -2.0 0 -3.0 300 100 vgs = -4.5 v -1.5 v -2.5 v -1.8v common source ta = 2 5 c ambient temperature ta (c) r ds (on) ? ta drain?source on-resistance r ds (on) (m ? ) 0 ? 50 0 50 150 100 300 100 common source i d = -1.5 a / v gs = -4.5 v -0.25 a / -1.5 v -1.0 a / -2.5 v -0.5 a / -1.8v ambient temperature ta (c) v th ? ta gate threshold voltage v th (v) -1.0 0 ? 50 0 150 -0.5 50 100 common source v ds = -3 v i d = -1 ma drain?source on-resistance r ds (on) (m ? ) 0 -2 -4 -6 gate?source voltage v gs (v) 0 r ds (on) ? v gs -8 200 - ?25 c 25 c 300 i d =-1.5a common source ta = 25c ta = 100 c gate?source voltage v gs (v) i d ? v gs drain current i d (a) -10 0 -0.1 -1 -0.001 -0.01 -0.0001 -1.5 -1.0 common source v ds = -3 v - 25 c ta = 100 c 25 c -0.5 drain?source voltage v ds (v) i d ? v ds drain current i d (a) 0 -2 0 -0.2 -0.4 -0.6 -1 -1 -0.8 -3 -4 common source ta = 25 c -1.8 v vgs = -1.5 v -2.5v -5 -4.5v 200 200 100
SSM3J46CTB 2009-09-28 4 drain current i d (a) forward transfer admittance ? y fs ? (s) |y fs | ? i d 0.1 -10 1 10 -0.1 -1 3 0.3 -0.01 common source v ds = -3 v ta = 25c drain reverse current i dr (a) drain?source voltage v ds (v) i dr ? v ds 10 0 0.1 1 0.001 0.01 0.2 0.6 0.4 1.0 0.8 1.2 -25 c ta =100 c 25 c common source v gs = 0 v g d s i dr drain current i d (a) switching time t (ns) t ? i d 1 -0.001 1000 -0.1 10000 -1 -10 100 t f common source v dd = -10 v v gs = 0 to -2.5 v ta = 2 5 c r g = 4.7 10 -0.01 t off t r t on total gate charge qg (nc) dynamic input characteristic gate?source voltage v gs (v) 0 0 4 8 -4 -8 10 -6 -2 2 6 vdd = - 16 v vdd = - 10 v common source i d = -2.0 a ta = 25c drain-source voltage v ds (v) c ? v ds capacitance c (pf) 10 -0.1 -1 -10 -100 100 1000 300 30 common source ta = 25 c f = 1 mhz v gs = 0 v c iss c oss c rss
SSM3J46CTB 2009-09-28 5 a b ambient temperature ta (c) p d ? t a drain power dissipation p d (mw) 1000 0 200 120 100 140 400 800 160 1200 80 60 40 20 0 -20 -40 a b a: mounted on fr4 board (25.4mm 25.4mm 1.6mm , cu pad : 645 mm 2 ) b: mounted on fr4 board (25.4mm 25.4mm 1.6mm , cu pad : 0.58 mm 2 ) pulse width t w (s) r th ? t w transient thermal impedance r th (c/w ) 0.001 1000 0.01 0.1 1 100 10 100 1000 1 10 single pulse a. mounted on fr4 board (25.4 mm 25.4 mm 1.6 mm, cu pad: 645 mm 2 ) b. mounted on fr4 board (25.4 mm 25.4 mm 1.6 mm, cu pad: 0.58 mm 2 ) 600
SSM3J46CTB 2009-09-28 6 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively ?toshiba?), reserve the right to make changes to the in formation in this document, and related hardware, software a nd systems (collectively ?product?) without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba?s written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product?s quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and application notes for product and the precautions and condi tions set forth in the ?toshiba semiconductor reliability handbook? and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers? product design or applications. ? product is intended for use in general el ectronics applications (e.g., computers, personal equipment, office equipment, measur ing equipment, industrial robots and home electroni cs appliances) or for specif ic applications as expre ssly stated in this document . product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality a nd/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or se rious public impact (?unintended use?). unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic s ignaling equipment, equipment used to control combustions or explosions, safety dev ices, elevators and escalato rs, devices related to el ectric power, and equipment used in finance-related fields. do not use product for unintended use unless specifically permitted in thi s document. ? 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